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Characterization of Spray Pyrolysised Nano Tin Disulphide Thin Film, Vol. 9, No. 1 (Jan. 2020), PP:1-5
doi:10.18576/ijtfst/090101
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Authors: |
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J. Vijayarajasekaran - Department of Physics, Nazia college of Arts and science, Kariapatti-626 115, India
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P. Gopalakrishnan - Department of Physics, P.S.R. Engineering college, Sivakasi - 626 140, India
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L. Amalraj - Department of Physics, V.H.N.S.N. College, Virudhunagar- 626 001, India
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K. Vijayakumar - Department of Physics, H.H.The Rajah’s college, Pudukkottai- 622 001, India
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How to Cite:
J. Vijayarajasekaran, P. Gopalakrishnan, L. Amalraj, K. Vijayakumar, Characterization of Spray Pyrolysised Nano Tin Disulphide Thin Film, International Journal of Thin Film Science and Technology, Vol. 9, No. 1, pp: 1-5, 2020, Doi: https://dx.doi.org/10.18576/ijtfst/090101
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Effect of TM (TM= Sn, Mn, Al) Doping on the Physical Properties of ZnO Thin Films Grown by Spray Pyrolysis Technique: A comparative Study, Vol. 9, No. 1 (Jan. 2020), PP:7-19
doi:10.18576/ijtfst/090102
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Authors: |
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M. N. Amroun - Laboratoire d’Elaboration et de Caractérisation des Matériaux, département d’électronique, Université Djilali Liabes, BP89, Sidi Bel Abbés 22000. Algeria
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K. Salim - Laboratoire d’Elaboration et de Caractérisation des Matériaux, département d’électronique, Université Djilali Liabes, BP89, Sidi Bel Abbés 22000. Algeria
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A. H. Kacha - Laboratoire de Micro-électronique Appliquée, Université Djillali Liabès de Sidi Bel Abbès, 22000 Sidi Bel Abbès, Algeria.
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M. Khadraoui - Laboratoire d’Elaboration et de Caractérisation des Matériaux, département d’électronique, Université Djilali Liabes, BP89, Sidi Bel Abbés 22000. Algeria
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How to Cite:
M. N. Amroun, K. Salim, A. H. Kacha, M. Khadraoui, Effect of TM (TM= Sn, Mn, Al) Doping on the Physical Properties of ZnO Thin Films Grown by Spray Pyrolysis Technique: A comparative Study, International Journal of Thin Film Science and Technology, Vol. 9, No. 1, pp: 7-19, 2020, Doi: https://dx.doi.org/10.18576/ijtfst/090102
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Nano Structural Properties of Lead Doped Cadmium Sulfide (Cd1-xPbxS) Thin Films Deposited by Spray Pyrolysis Technique, Vol. 9, No. 1 (Jan. 2020), PP:21-25
doi:10.18576/ijtfst/090103
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Authors: |
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Ranojit Kumar Dutta - Faculty of Science and Engineering, City University, Dhaka 1216, Bangladesh.\\ Department of Physics, Faculty of Engineering, Bangladesh University of Engineering and Technology (BUET), Dhaka 1000, Bangladesh\\College of Hydraulic & Environmental Engineering, China Three Gorges University, Yichang, 443002, Hubei, P.R. China.
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How to Cite:
Ranojit Kumar Dutta, Nano Structural Properties of Lead Doped Cadmium Sulfide (Cd1-xPbxS) Thin Films Deposited by Spray Pyrolysis Technique, International Journal of Thin Film Science and Technology, Vol. 9, No. 1, pp: 21-25, 2020, Doi: https://dx.doi.org/10.18576/ijtfst/090103
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An Investigation of the Techniques and Advantages of Crystal Growth, Vol. 9, No. 1 (Jan. 2020), PP:27-30
doi:10.18576/ijtfst/090104
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Authors: |
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Maryam Kiani - Department of Physics, Bu-Ali Sina University, Hamadan, Iran.
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Ehsan Parsyanpour - Department of Physics, Bu-Ali Sina University, Hamadan, Iran.
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Feridoun Samavat - Department of Physics, Bu-Ali Sina University, Hamadan, Iran.
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How to Cite:
Maryam Kiani, Ehsan Parsyanpour, Feridoun Samavat, An Investigation of the Techniques and Advantages of Crystal Growth, International Journal of Thin Film Science and Technology, Vol. 9, No. 1, pp: 27-30, 2020, Doi: https://dx.doi.org/10.18576/ijtfst/090104
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Chemical Deposition of Polycrystalline Znse Thin Films from Malonic Acid Solution: Nucleation and Growth Mechanism, Structural, Optical and Electrical Studies, Vol. 9, No. 1 (Jan. 2020), PP:31-35
doi:10.18576/ijtfst/090105
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Authors: |
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P. A. Chate - Department of Chemistry, J.S.M. College, Alibag, (M.S.), India.
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D. J. Sathe - Department of Chemistry, KIT’s College of Engineering, Kolhapur, (M.S.) India.
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U. B. Sankpal - Department of Chemistry, Gogate College, Ratnagiri, (M.S.), India.
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How to Cite:
P. A. Chate, D. J. Sathe, U. B. Sankpal, Chemical Deposition of Polycrystalline Znse Thin Films from Malonic Acid Solution: Nucleation and Growth Mechanism, Structural, Optical and Electrical Studies, International Journal of Thin Film Science and Technology, Vol. 9, No. 1, pp: 31-35, 2020, Doi: https://dx.doi.org/10.18576/ijtfst/090105
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Cross Sectional TEM Characterization of Epitaxial Silicon Film Grown using Hot Wire Chemical Vapor Deposition, Vol. 9, No. 1 (Jan. 2020), PP:37-40
doi:10.18576/ijtfst/090106
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Authors: |
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M. Abul Hossion - Department of Physics, BSMR Maritime University, Dhaka 1216, Bangladesh.
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B. M. Arora - Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India.
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How to Cite:
M. Abul Hossion, B. M. Arora, Cross Sectional TEM Characterization of Epitaxial Silicon Film Grown using Hot Wire Chemical Vapor Deposition, International Journal of Thin Film Science and Technology, Vol. 9, No. 1, pp: 37-40, 2020, Doi: https://dx.doi.org/10.18576/ijtfst/090106
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Analytical Modelling and Simulation of Highly Sensitive n- RADFET Dosimeter, Vol. 9, No. 1 (Jan. 2020), PP:41-49
doi:10.18576/ijtfst/090107
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Authors: |
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Srijan Pathak - Department of Electronics & Communication Engineering. Motilal Nehru National Institute of Technology, Allahabad, India-211004
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Spriha Singh - Department of Electronics & Communication Engineering. Motilal Nehru National Institute of Technology, Allahabad, India-211004
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Tanya Jha - Department of Electronics & Communication Engineering. Motilal Nehru National Institute of Technology, Allahabad, India-211004
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Ankush Agrawa - Department of Electronics & Communication Engineering National Institute of Technology Raipur, Chattisgarh, India- 492010.
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Shweta Tripathi - Department of Electronics & Communication Engineering. Motilal Nehru National Institute of Technology, Allahabad, India-211004.
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How to Cite:
Srijan Pathak, Spriha Singh, Tanya Jha, Ankush Agrawa, Shweta Tripathi, Analytical Modelling and Simulation of Highly Sensitive n- RADFET Dosimeter, International Journal of Thin Film Science and Technology, Vol. 9, No. 1, pp: 41-49, 2020, Doi: https://dx.doi.org/10.18576/ijtfst/090107
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Effect of Dyes Nano-Material Electrodes for Exploration of Dye- Sensitized Solar Cells, Vol. 9, No. 1 (Jan. 2020), PP:51-55
doi:10.18576/ijtfst/090108
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Authors: |
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DA Oeba - Department of Physics, Kenyatta University, P. O. Box 43844-00100, Nairobi, Kenya.
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CO Mosiori - Department of Mathematics and Physics, Technical University of Mombasa, P. O. Box 90420 -80100, GPO Mombasa, Kenya.
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How to Cite:
DA Oeba, CO Mosiori, Effect of Dyes Nano-Material Electrodes for Exploration of Dye- Sensitized Solar Cells, International Journal of Thin Film Science and Technology, Vol. 9, No. 1, pp: 51-55, 2020, Doi: https://dx.doi.org/10.18576/ijtfst/090108
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Enhanced Activity of Chemically Synthesized Nanorod Mn3O4 Thin Films for High Performance Supercapacitors, Vol. 9, No. 1 (Jan. 2020), PP:57-67
doi:10.18576/ijtfst/090109
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Authors: |
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P. Immanuel - Department of Physics, National Changhua University of Education, Changhua 500, Taiwan.
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G. Senguttuvan - Department of Physics, University College of Engineering- BIT campus, Anna University, Tiruchirappalli, India
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K. Mohanraj - Raman Research Laboratory, PG & Research Department of Physics, Government Arts College, Tiruvannamalai-606603, Tamilnadu, India\\Department of Physics Graduate Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan.
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How to Cite:
P. Immanuel, G. Senguttuvan, K. Mohanraj, Enhanced Activity of Chemically Synthesized Nanorod Mn3O4 Thin Films for High Performance Supercapacitors, International Journal of Thin Film Science and Technology, Vol. 9, No. 1, pp: 57-67, 2020, Doi: https://dx.doi.org/10.18576/ijtfst/090109
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Effective Analysis for Usability of Applications Software, Vol. 9, No. 1 (Jan. 2020), PP:69-73
doi:10.18576/ijtfst/090110
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Authors: |
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Sarmad Mohammad - Faculty of Computing, Arab Open University (AOU), Kingdom of Bahrain.
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How to Cite:
Sarmad Mohammad, Effective Analysis for Usability of Applications Software, International Journal of Thin Film Science and Technology, Vol. 9, No. 1, pp: 69-73, 2020, Doi: https://dx.doi.org/10.18576/ijtfst/090110
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