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Analytical Modelling and Simulation of Highly Sensitive n- RADFET Dosimeter |
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PP: 41-49 |
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doi:10.18576/ijtfst/090107
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Author(s) |
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Srijan Pathak,
Spriha Singh,
Tanya Jha,
Ankush Agrawa,
Shweta Tripathi,
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Abstract |
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| In the present paper, we have developed a model of a n-RADFET dosimeter device. Moreover, the study has addressed the effects of ionizing radiation on the surface potential and threshold voltage characteristics of the device. In addition, a detailed simulation analysis of the device has been conducted to obtain some further results. The study indicated that high sensitivity can be obtained for RADFET using n-MOSFET device. The results are expected to benefit in establishing the effectiveness of n-RADFET device as a dosimeter. |
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