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05- International Journal of Thin Film Science and Technology
               
 
 
 
 
 
 
 
 
 
 
 
 

Forthcoming
 

 

The Detection Of IVT Over Iraq And Surrounding Region And The links To Precipitation Over Iraq

Mushtaq Obaid Oleiwi,
Abstract :
In this study, low-level vertically integrated moisture flux (IVT) features are examined, IVT across Iraq and surrounding areas are calculated and analyzed, and IVT effects on precipitation across Iraq during the rainy season are demonstrated. So, IVT has a greater impact in dry and semi-arid areas. The maximum precipitation linked with IVT from January to December (1981-2020) is identified and introduced in this study. For the purpose of identifying IVT and determining the IVT threshold for each month, wind component data (u, v) and specific humidity data were employed. The largest rate of precipitation was in January, related to IVT, and was finally introduced and evaluated. Calculated IVT was investigated by their monthly precipitation. The results indicate that the Mediterranean Sea and the Red Sea are the main sources of IVT, and we can see that the Red Sea has an impact on Iraqs south and south-central region while the Mediterranean Sea has an impact on Iraqs north and north-central region. There is also a correlation between the IVT and precipitation in Iraq during the rainy season. We look at the months with the highest and lowest precipitation rates. The amount of precipitation is largely influenced by the intensity and direction of IVT. IVT readings and rainfall intensity had a strong correlation. Additionally, IVT transfer from the Mediterranean and Red Seas has an impact on the amount of precipitation over Iraq and the neighboring areas.

 

Investigation and characterization of RF sputtered Zinc oxynitride thin Films

Anjana J G,
Abstract :
A systematic study of ZnON material characterization under different sputtering conditions was done. The RF sputtered thin films of ZnON were characterized to study the nature of films.Introduction of nitrogen decreased the deposition rate from 6 nm/min for ZnO film(sample1) to 3.33 nm/min for ZnON film (sample2).Raman spectroscopy was done to find distinguished peaks for nitrogen at around 275cm−1 .SEM imaging was done along with EDAX to determine the elemental composition. XRD and XPS were done to study crystallinity and composition. The grain size of ZnON film was found in the order of 40 nm. The effect of annealing temperature was studied using XRD by annealing thin films under different temperatures(100◦C ,160◦C and 200◦C ). The grain size greatly increased, indicating more crystalline nature after annealing. When the temperature increases beyond a limit, the film becomes amorphous which is evident from the XRD results. The research aids in forecasting the necessary process parameter for employing ZnON in the area of flexible electronics.

 

Fabricate and Characterization of SrTiO3-based MIM capacitors

Hamed Alwan,
Abstract :
The conventional method uses the stoichiometric mixture of metallic oxides to synthesize polycrystalline SrTiO3. The SrTiO3 was prepared by spin coating to fabricate Metal-Insulator-Matel(MIM) aluminum-SrTiO3 film-aluminum. The cubic structure of the prepared thin film of SrTiO3 was confirmed by X-ray diffraction analysis. Strontium Titanate was deposited on silicon substrates. Studying the effect of the film thickness on the structural and electrical properties. The surface morphology of deposited thin films was studied using a scanning electron microscope. Electrical properties for SrTiO3 films at constant frequency were measured. The electrical conductivity decreases with increasing thickness. The behavior of (capacitance- Frequency) at different thicknesses was discussed. It is noted that the dielectric constant decreases with increasing frequency for all films, and the dielectric constant increases as thickness increases.

 

Influence of effective surface area on gas sensing properties and surface morphology of Ag doped Cu2O thin films by cost effective method of M-SILAR technique

K. Dhanabalan,
Abstract :
employing Modified-Successive Ionic Layer Adsorption and Reaction (SILAR) method, undoped and silver (Ag) doped Cu2O (Cu2-xAgxO; x= 2.5, 5.0, 7.5 and 10.0 mol. %) were deposited. The Ag doping level causes significant influence on the properties of the system prepared. The results indicated that 10.0 mol.% Ag doping causes major property improvements. The deposited films were characterized for their structural, morphological, surface smoothness, optical and gas sensitivity. The X-ray diffraction analysis shows the polycrystalline growth of Cu2-xAgxO films. The substitution by Ag2+ ions results in cubic structure (111) preferential orientation. The transmittance and optical band-gap values are maximum (≈2.12 to 1.73eV) for the Ag doping level of 10.0 mol.%. The Fourier transform infrared (FTIR) results confirmed the stretching vibrations of Cu-O and Ag-O. The Gas sensitivity revealed, Ag doped Cu2O serve as sensor material for the detection of NH3 molecules at room temperature compare than to undoped film. The gas sensing test was performed by the resistance measurement of the system using a Keithley System.

 

Effect of KrF laser irradiation on the morphology and microstructure of amorphous PZT thin films grown by RF magnetron sputtering

mohammed mahdi,
Abstract :
This work deals with the crystallization of amorphous PZT thin films, induced by 248 nm KrF laser source. The as-grown 250 nm of PZT thin films using RF magnetron system, on tree different substrate (Si/SiO2/Ti/Pt, Si/SiO2, and glass/Al) are treated from 10 to 100 mj/cm. The morphology is investigated by scanning electron microscopy (SEM) and surface roughness by scanning probe microscopy (SPM). The microstructure using X-ray diffraction (XRD) and ellipsometry. The Si/SiO2/Ti/Pt/PZT samples morphology investigation shows the formation of square wells of 10 m side on the surface. However, the roughness measured is 11 nm. The microstructure analysis shows good crystallization following (110) dominant orientation with a grain size of 229.64 nm at 30, 25, and 20 mj/cm. For Si/SiO2/PZT samples, the surface morphology has seriously deteriorated. The microstructure analyses show the emerging of a weak peak of (110) plan with 110 nm of grain size, at 20 mj/cm however ablation starts at 25 mj/cm, at low energy 10 and 15 mj/cm only pyrochlore phase is observed. For glass/Al/PZT ablation occur at 15 mj/cm and microstructure analysis shows the amorphous phase at 10 mj/cm.

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