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Tailoring Structural, Optical and, Electrical Properties of ZnO Spin Coated Films through Boron Doping for Optoelectronic Applications |
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PP: 223-231 |
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doi:10.18576/ijtfst/150209
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Author(s) |
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Jannatul Fardus Dinar,
Shad Afif Sovon,
Sinthia Shabnam Mou,
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Abstract |
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| Boron-doped zinc oxide (BZO) thin films were prepared by a low-cost sol–gel spin-coating technique to investigate the influence of boron incorporation on their structural, morphological, optical, and electrical properties. Undoped ZnO and BZO films with 1, 2, 3, and 5 weight percentage (wt%) of boron were synthesized on glass substrates and annealed at 350 ◦C temperature for 30 min. The films were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV–Vis spectroscopy, and the van der Pauw technique. The film thickness varied from 30 to 500 nm with increasing boron concentration. XRD confirmed the hexagonal wurtzite structure of undoped ZnO, while boron incorporation reduced the crystallinity. SEM revealed a decrease in grain size and the surface morphology shifted toward an amorphous nature with increasing boron concentration. EDX confirmed the presence of B, Zn, and O in the samples. The optical band gap decreased from 3.31 eV for undoped ZnO to 2.73 eV for 5% BZO. Resistivity increased with B doping and varied non-monotonically from 29.525 × 10−4 to 62.276 × 10−4 Ω · cm for different concentrations of B. The results demonstrate that boron incorporation effectively tunes the properties of ZnO thin films, indicating potential for photovoltaic and optoelectronic applications. |
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