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Thermally Induced Structural Changes and Optical Properties of (ZnSe)0.9Cu0.1 Chalcogenide Thin Films |
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PP: 97-116 |
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doi:10.18576/ijtfst/150108
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Author(s) |
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Mahmoud N. Abdel-Salam,
N. Sabry,
M. S. I. Koubisy,
E. R. Shaaban,
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Abstract |
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| (ZnSe)0.9Cu0.1 nanocrystalline thin films were deposited by the thermal evaporation technique. Then, annealed in the temperature range from 100 ◦C to 500 ◦C. The microstructural and optical properties of as-deposited and annealed films were investigated by XRD diffraction analysis techniques and UV–Vis spectrophotometer, respectively. The crystallite size of the investigated films exhibited a unique phase of wurtzite hexagonal structure with no other phases and increased with increasing annealing temperatures, while the strain and dislocation density decreased. Optical properties exhibited a blue shift effect, and the optical band gap was increased from (2.527 to 2.659 eV), whereas the Urbach energy decreased from (0.341 to 0.133 eV) as annealing temperatures increased. The steepness parameters and electron-phonon interactions are calculated. The single oscillator model Wemple–Didomenico was used to calculate the dispersion parameters of (ZnSe)0.9Cu0.1 thin films. In addition, some optical parameters as single oscillator energy Eo, the dispersion energy Ed, the average oscillator strength so, the ratio of carrier concentration N/m∗, plasma frequency ωp, and dielectric constant εr are examined. Finally, the non-linear optical parameters are identified and affected by increasing the annealing temperatures. |
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