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Modeling Pressure and Distance Effects on Particle Transport in PVD Sputtering Using a 3D Monte Carlo Approach |
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PP: 75-81 |
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doi:10.18576/ijtfst/150106
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Author(s) |
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Abdelkader Bouazza,
Mark-Edgard Tchanolo,
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Abstract |
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| Thin-film technologies continue to advance in response to industrial requirements for improved performance, precision, and reliability. Among deposition techniques, physical vapor deposition (PVD) via sputtering is widely recognized for its capacity to generate high-quality films with controlled morphology and reproducible characteristics. This study employs a three-dimensional Monte Carlo simulation model to investigate the transport behavior, energy evolution, and angular distribution of sputtered particles during thin-film formation, accounting for elastic collisions with background argon gas. The influence of chamber pressure and target–substrate spacing is evaluated in detail. Results show that increasing pressure or distance produces more uniform particle distributions, consequently improving film homogeneity. Although the present work is purely computational, the obtained trends are consistent with previously reported Monte Carlo simulations and experimentally supported transport studies. |
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