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Single-Cycle Growth of GaAs-Ge-GaAs Heterostructures from Bismuth Melt: Structural and Photoelectronic Properties |
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PP: 43-51 |
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doi:10.18576/ijtfst/150103
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Author(s) |
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A.Sh.Razzokov,
V.V.Girzhon,
A.S.Saidov,
O.V.Smolyakov,
A.V.Dolbin,
P.V.Mateychenko,
D. E. Koshchanova,
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Abstract |
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| In this work, the possibility of forming a substitutional solid solution of the (Ge2)1-x(GaAs)x type was demonstrated through calculations of the generalized atomic moment. In a single technological cycle, GaAs-Ge-(Ge2)1- x(GaAs)x (0≤x≤1) heterostructures were obtained from a limited bismuth-based melt solution on single-crystal GaAs (100) substrates. The (Ge2)1-x(GaAs)x film with a variable chemical composition allowed to expand the spectral range of the photosensitivity of the nGaAs-pGe-p(Ge2)1-x(GaAs)x structure (0.65 - 2.0 eV). A method has been developed for producing highly crystalline solid solutions with a variable chemical composition (the dislocation density on the films surface was 2·104 сm-2, the surface roughness varied within the range of 1.18 - 1.66 nm). |
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