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Optimization of the electrical conductivity of SnO2 by Taguchi design and sol-gel Route for perovskite solar cells |
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PP: 31-42 |
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doi:10.18576/ijtfst/150102
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Author(s) |
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K. J. A. Yao,
B. Hartiti,
F. K. Konan,
Y. Doubi,
A. Ziti,
A. Batan,
H. Labrim,
A. Laazizi,
B. Aka,
P. thevenin,
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Abstract |
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| This work aims to optimize the electrical conductivity of SnO2 thin films elaborated by sol-gel spin-coating coupled to Taguchi approach for electron transport in perovskite solar cells (PSC). An L9 (33) orthogonal array with three factors: sol-gel solution concentration in Sn4+, spin-coating speed, and annealing temperature, each at three levels was used to design the experiments. Characterizations including structural (XRD), vibrational mode (Raman), surface (SEM/EDX), optical (UV-Vis), and electrical (two-point probe) analyses, as well as statistical evaluations (signal-to-noise (S/N) ratio and ANOVA), were conducted to identify an optimal synthesis condition (A3B1C3) for the SnO2 thin film. This combination Sn4+ concentration of 0.46 M, spin speed of 2500 rpm, and annealing temperature of 400°C for 2 hours represents a reproducible and economically viable protocol, yielding an electrical conductivity of σ = 9.005 × 10-2 S·cm−1. Moreover, the optimized SnO2 layer exhibits a compact rutile cassiterite structure with a homogeneous surface, an optical transparency of approximately 85.074% in the visible spectrum and a direct bandgap Eg = 3.642 eV. This combination of properties fulfills the essential criteria for efficient electron transport material (ETM) in flexible, low-cost, and temperature-sensitive PSC architectures. |
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