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Deposition Temperature Effects on Structural and Optical Properties of RF-Sputtered Tungsten Disulfide Thin Films |
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PP: 187-193 |
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doi:10.18576/ijtfst/140305
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Author(s) |
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A. A. Alahmari,
El Sayed Yousef,
H. H. Hegazy,
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Abstract |
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| Tungsten disulfide (WS2) thin films were deposited using RF sputtering. The study investigated the impact of substrate temperature, ranging from room temperature to 400 °C, on the structural and optical properties. Structural characterization using XRD, Raman spectroscopy, SEM, and AFM reveals that thin films deposited between 200 °C and 400 °C are polycrystalline. All films showed high optical transmittance (>80%) in the visible spectrum. The optical energy gap for films prepared at room temperature was determined to be 2.46 eV and decreased to 1.79 eV with increasing substrate temperature. Notably, thin films deposited at 400 °C exhibited slightly wider band gaps, which may be attributed to non- stoichiometric WS2-x as confirmed via EDX. This study illustrates that WS2 thin films have structural and optical characteristics that render them viable candidates for use as window layers in thin-film solar cell devices, providing a basis for further development and integration in photovoltaic technologies. |
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