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Simulation Studies on Thin-Film Solar Cells Based on Ultrathin Sn-Ge-Se-Pb (TGSL) Absorber |
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PP: 163-172 |
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doi:10.18576/ijtfst/140302
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Author(s) |
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H. A. Mohamed,
M. M. Wakkad,
M. M. Abd El Raheem,
N. A. Hamed,
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Abstract |
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| In this study the novel absorber Sn-Ge-Se-Pb (TGSL) based thin-film solar cells with CdS as a buffer layer, indium tin oxide (ITO) as charge-collecting contacts, and Mo as the back contact is proposed, and its photovoltaic performance is evaluated theoretically. The considered study is carried out on the basis of the variation of Pb-ratio. Moreover, the effect of optical losses resulting from the reflection losses at interfaces air/ITO, ITO/CdS, CdS/ TGSL, and absorption losses in ITO and CdS have been taken into calculation. Further, the influence of reflectivity of back contact (Mo) and the optimum energy gap and thickness of TGSL have been studied in correlation with the solar cell performance of the considered absorbent. The short-circuit current density is greatly affected by the optical loss than by the loss due to recombination. Based on the TGSL absorber, solar cells with an efficiency of more than 16% can be obtained using certain conditions of the used materials. |
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