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Numerical Evaluation of Quantum Efficiency in CdS/ZnSe Quantum Dot Solar Cells Using SCAPS and Quantum Disk Simulations |
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PP: 157-161 |
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doi:10.18576/ijtfst/140301
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Author(s) |
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Rawaa Abbas Abd Ali,
Shymaa K. Hussian,
Samir M. Abdula Mohsin,
Dheyaa A. Bilal,
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Abstract |
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| This study numerically models and analyzes the quantum efficiency (QE) and absorption characteristics of CdS/ZnSe quantum dot (QD) solar cells using the Solar Cell Capacitance Simulator (SCAPS) and Quantum Disk theory. The investigation focuses on how variations in QD size, junction depth, and ZnSe layer thickness affect device performance. Results show that n-doped CdS QDs combined with p-doped ZnSe bulk layers enhance bandwidth and produce a QE peak within the ultraviolet range (240–330 nm). An optimal ZnSe layer thickness of 0.08 μm yields a maximum efficiency of 13.5%. The findings offer design guidelines for improving thin-film photovoltaic devices based on QD architectures. |
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