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Opto-Electrical Properties of Chemical bath Deposited Cu4SnS4 Thin Films |
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PP: 11-18 |
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doi:10.18576/ijtfst/110102
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Author(s) |
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Ho Soon Min,
Duke Oeba,
Evans Makori,
Mathew Munji,
Walter Njoroge,
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Abstract |
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| Thin films could be explained as a very thin layer of a substance deposited onto various substrates. Nowadays, a variety of binary, ternary, quaternary and pent nary films have been produced by using different deposition techniques. A comprehensive study of the effects of deposition temperature on the optical and electrical properties of chemical bath deposited copper tin sulphide (Cu4SnS4) thin films is reported. The Cu4SnS4 thin films were prepared, characterized, and optimized for solar light trapping. Optical properties of the films namely, reflectance and transmittance were measured using UV-VIS NIR 3700 spectrophotometer. Transmittance and band gap of the optimized Cu4SnS4 thin films were found to be below 25 % and 1.46 eV respectively (films deposited at 70 oC). Further, these films showed a peak average absorbance of 62.95 %. The films were characterized using a four-point probe to determine their surface sheet resistivity. The resistivity decreases from 19.28 Ω-cm to 8.38 Ω-cm with an increase in the deposition temperature (40°C to 70°C). The obtained optical and electrical results showed the optimum deposition temperature (70°C) for the formation of Cu4SnS4 thin films, could be used as an absorber layer for solar cell applications. The optimized Cu4SnS4 films had the lowest transmittance and reflectance, highest absorbance, minimum band gap, and lowest resistivity, all positive qualities of potential material for use as an absorber layer for photovoltaic applications.
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