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Features of n-SnO2 / p-Si Structural Heterojunction Manufactured by the Chemical Steam-Gas Deposition Method |
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PP: 83-87 |
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doi:10.18576/ijtfst/100202
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Author(s) |
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Mardonbek Ulugbekovich Hajiev,
Rustam Rashidovich Kabulov,
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Abstract |
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| By the method of chemical vapor-gas deposition (CVD) SnO2 layers have been grown at the temperature of 170-500°С on the surface of p-Si single crystals with the (111) direction; the wafers had a thickness of 500 μm. A special evaporator with a temperature of 80-120°C has been used to obtain saturated steam in a quasi-closed reactor. The grown n- SnO2 layers had a microcrystalline structure. Based on the analysis of X-ray diffraction and the dark current – voltage characteristics, an energy-band diagram of the n-SnO2/p-Si heterostructure is constructed.
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