Login New user?  
05- International Journal of Thin Film Science and Technology
An International Journal
               
 
 
 
 
 
 
 
 
 
 
 
 

Content
 

Volumes > Vol. 9 > No. 3

 
   

Analog and RF Performance Analysis of 22nm Modified Source/Drain Dual Gate FDSOI MOSFET

PP: 185-192
doi:10.18576/ijtfst/090305
Author(s)
Abhishek Kumar Malviya, Himanshu Yadav, R. K. Chauhan, Anshika Srivastava,
Abstract
In this paper, 22nm FDSOI MOSFET having Modified Source/Drain with Dual Gate has been analyzed. This device, not only provides higher ON current but it has also a lower leakage current in order of pA. With the help of Dual Gate (DG) electrical characteristics and Short Channel Effects improved. Analysis parameters like Drain Induced Barrier Lowering (DIBL), Subthreshold Swing, Threshold roll-off, Carrier Concentration, Gate to drain Capacitance, Gate to Source Capacitance, cut-off frequency, Conduction and Valence Band Banding are analyzed using high-k spacers.

  Home   About us   News   Journals   Conferences Contact us Copyright naturalspublishing.com. All Rights Reserved