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Optical and Electrical Properties of CdS: B Thin Film Deposited by Chemical Bath Deposition for Photovoltaic Application. |
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PP: 93-99 |
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doi:10.18576/ijtfst/080301
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Author(s) |
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Duke Ateyh Oeba,
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Abstract |
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| Globally, there is a high demand for clean, sustainable and renewable energy for domestic and industrial use. Conventional photovoltaic cell technology relies heavily on crystalline silicon wafers which render silicon-based solar cells expensive due to the initial cost of production and required complex deposition methods. Due to these challenges, great research interest is now directed towards thin-film solar cells. In this work, chemical bath deposition (CBD) method was chosen in the preparation of boron doped cadmium sulphide (CdS: B) thin film onto a glass slide substrate. The prepared CdS: B thin films were characterized and optimized as a window layer for solar light trapping. The transmittance of the CdS: B films varied between 70% and 81% for boron concentration ranging from 0.0 M to 0.06 M. With the increase in boron concentration, band gap and resistivity of the CdS: B varied from 2.96 to 3.72eV and 120 Ω-cm to 58Ω-cm, respectively. Based on the results obtained, we believe that CdS: B is suitable as a window layer for solar light trapping in the fabrication of a photovoltaic cell.
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