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Microstructural and Electrical Characterization of Pt/Si Nanowires Schottky Diode Grown by Metal Assisted Chemical Etching Method |
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PP: 107-111 |
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doi:10.18576/ijtfst/060302
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Author(s) |
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Bukke Naresh Naik,
Lucky Agarwal,
Shweta Tripathi,
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Abstract |
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| In this report, microstructural and electrical parameters have been evaluated for Pt/Si nanowires Schottky nanocontact, grown by metal-assisted chemical etching method. Schottky contact has been formed by placing a platinum conducting tip of STM at an optimized distance (in Armstrong) from the peak of SiNWs. At an optimized separation between the tip and silicon nanowires, resulting I-V characteristic shows it rectifying behaviour. Ideality factor has been evaluated as 3.7 and reverse breakdown voltage is -5V. |
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