Login New user?  
05- International Journal of Thin Film Science and Technology
An International Journal


Volumes > Vol. 5 > No. 2


Synthesis of GaN Thin Film Using a Low-Cost Electrochemical Deposition Technique for Hydrogen Gas Sensing

PP: 113-119
K. Al-Heuseen,
GaN thin films were synthesized on n-Si (111) and n-Si (100) substrates using a low-cost electrochemical deposition technique for hydrogen gas sensing. SEM images revealed that the grown GaN films consist of a network of nanoflake structures. XRD analyses showed both the hexagonal wurtzite and the cubic zinc blend GaN phases for the deposited films with the crystallite size around 18-19 nm. Photoluminescence spectrum showed that the energy gaps of h-GaN and c-GaN were near 3.39eV and 3.2eV respectively at 300K. Corresponding I-V characteristics of the Schottky diodes were recorded before and after hydrogen gas exposure. Thermionic emission model was used to analyses I-V data. The barrier height increased significantly with hydrogen flow rate. Sensitivity and response time were discussed for the two samples.

  Home   About us   News   Journals   Conferences Contact us Copyright naturalspublishing.com. All Rights Reserved