|
|
 |
| |
|
|
|
Ion Beam Synthesis of Cobalt Silicide Layers in Si(111) |
|
|
|
PP: 211-213 |
|
|
|
Author(s) |
|
|
|
Ayache Rachid,
Sidoumou Mohamed,
Kolitsch Andreas,
|
|
|
|
Abstract |
|
|
| Thin CoSi2 layers are formed by 195 keV Co ion implantation in Si(111) substrates to a dose of 2 × 1017 Co+/cm2 at room temperature (RT) followed by annealing in N2 atmosphere at different temperatures during 1 h are investigated. The characterizations of the as-implanted and annealed samples are performed using Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD). Also the obtained samples have been characterized by means of Raman spectroscopy. The results show that the CoSi2 phase is polycrystalline with a random crystallographic orientation. |
|
|
|
|
|
|
|
