.:: Natural Sciences Publishing ::.

New user?

Journal of Nanotechnology & Advanced Materials

An International Journal

JNAM Home

Aim and Scope

For Reviewers

For Authors

Editorial Board

Publication Ethics

Processing Charges

Open Access

Submit an Article

Content

Forthcoming Papers

Subscription

Content


	Vol. 6 > Jul. 2018

Performance Analysis of Ge Channel Double Gate MOSFETs with High K/Ge Material Based on Inversion Charge Model, Vol. 6, No. 2 (Jul. 2018), PP:21-32

for Subscribers only

Authors:

P. Vimala - Department of Electronics and Communication Engineering, Dayananda Sagar College of Engineering, K.S.Layout, Bengaluru-560 078, Karnataka, India.

Nithin Kumar N. R. - Department of Electronics and Communication Engineering, Dayananda Sagar College of Engineering, K.S.Layout, Bengaluru-560 078, Karnataka, India.

Home

About us

News

Journals

Conferences