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Finite Element Analysis of a Coupled GN-III Thermoelastic Semiconductor Model Under Temperature-Dependent Conductivity |
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PP: 1707-1716 |
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doi:10.18576/amis/200615
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Author(s) |
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Eman Al-Lehaibi,
Ibrahim Abbas,
Aatef Hobiny,
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Abstract |
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| This study examines the effect of temperature-dependent thermal conductivity on the coupled thermomechanical behavior of a semiconductor medium within the fully coupled Green–Naghdi type III theory. The governing thermal, elastic, and carrier-density equations are solved numerically using the finite element method under an exponentially decaying surface heat flux. The results demonstrate that variable thermal conductivity significantly affects the magnitudes and propagation of all coupled fields. The numerical formulation is validated against published analytical solutions for the constant-conductivity limit, showing excellent agreement. The proposed model provides a reliable framework for analyzing coupled thermoelastic processes in semiconductors with temperature- dependent thermal properties. |
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