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Effect of Ion Implantation Temperature on Formation of Nanometric β-FeSi2 Layer |
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PP: 15-19 |
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doi:10.18576/aeta/120107
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Author(s) |
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AYACHE Rachid,
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Abstract |
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| A nanometric buried layer of iron disilicide was synthesized by ion implantation in Si(1 1 1) p-type at different
temperatures using 195 keV Fe ions with a dose of 2.1017 Fe+
/cm2
. The investigation of the phase composition is carried out by
Rutherford backscattering spectrometry (RBS), whereas the structural characterization is obtained by X-ray diffraction (XRD) pole
figure. The process of the silicidation has been investigated at a function of the ion implantation temperatures ranging from 200 to
440 °C. The precipitates favor epitaxial growth with respect to Si(1 1 1) planes with epitaxial relationships -FeSi2(2 2 0) //Si(1 1
1) and/or -FeSi2 (2 0 2) // Si(1 1 1).
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