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04- International Journal of Thin Films Science and Technology
               
 
 
 
 
 
 
 
 
 
 

Forthcoming
 

 

Ion source plasma parameters measurement using Langmuir probe

Haitham M. Farok,
Abstract :
In this work, we present the experimental results of plasma parameters using a Freeman type ion source, such as electron number density ne, plasma electron temperature Te, floating potential Vf, and plasma potential VS. The measurements of these basic parameters of pure Ar plasma were done with a cylindrical Langmuir probe situated perpendicular to a relatively weak magnetic field, B = 20 mT and were performed under constant low Ar pressure 4.6 × 10-3 mbar. Different methods were implemented to calculate the electron and ion densities. We have concluded that some of these methods are subjected to significant inaccuracy, mainly due to the uncertainty of the plasma potential location. However, It has been recognized that the plasma ion density ni = 1.46 × 1014 m3 found in this experiment using the ion current saturation part is the most reliable among the other values found, using the standard procedures from the electron retardation region (classic Langmuir method) and the electron saturation region of the measured probe IV characteristic. The results of calculations confirm the validity of the Langmuir’s orbital-motion-limited theory for low pressure plasma and low value of the magnetic field.

 

Chemical deposition of polycrystalline ZnSe thin films from Malonic acid solution: Nucleation and growth mechanism, structural, optical and electrical studies

P.A.Chate,
Abstract :
Zinc selenide (ZnSe) polycrystalline semiconductor thin films have been synthesized by dip method in malonic acid solution. The formation of nucleus and growth process of this technique has been studied. The XRD pattern shows a characteristic cubic structure with a (111) crystallographic preferred orientation. SEM studies reveal that grains are uniformly dispersed on the surface of the substrates. The optical energy gap was found to be 2.80 eV. The activation energies are 0.053 and 0.317 eV for low and high temperature region, respectively obtained from electrical measurement.

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