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04- International Journal of Thin Films Science and Technology



Effect of TM (TM= Sn, Mn, Al) doping on the physical properties of ZnO thin films grown by spray pyrolysis technique: A comparative study

khadraoui Mohammed,
Abstract :
ZnO:TM (TM=Sn, Mn, Al) thin films were successfully deposited on glass substrates by spray pyrolysis technique. X-ray analysis shows that ZnO:TM thin films crystallize in hexagonal structure with a preferred orientation of the crystallites along (002) direction and the crystallite size had increased with TM doping. The effect of TM type on the structural parameters was studied. These films were found to have direct band gap energy lying in the range of 3 2.25 eV and the average transmittance varies from 75 to 85 % with TM doping. The lowest figure of merit observed in the present study is 4.1310-5 (Ω-1) for AZO thin films. All the optical expected absorption capacity and photocurrent (jph) depend on the TM type. The optical constants such as the urbach energy, effective mass of the carriers (m*), refractive index (n) and extinction coefficient (k) were also evaluated. The AZO thin films exhibited the lowest resistivity (1.79 10-1 Ω cm).


Structural, Optical and gas sensing properties of TiO2-MoO3 thin films

P.V. Kala,
Abstract :
Thin films of TiO2 - MoO3 were deposited on quartz glass, Silicon (100) substrates by dc magnetron sputtering at two substrate temperatures of 300 K and 600 K and at a fixed sputtering pressure of 5 Pa and sputtering power of 50 W respectively. The atomic percent of (at.%) titanium (Ti) in composite is found to be 1 and 2.4. The deposited films were characterized by X-ray Photo Electron Spectroscopy (XPS) and Optical Transmittance studies. The optical transmittance of the MoO3 films deposited at 300 K, 5 Pa is 60 % and increases with increasing Ti at.%. The energy gap of the films is 3.7 eV and increases with increasing Ti at. %. The optical transmittance is further increasing when the films were deposited at 600 K, reaching 98 % and decreases with increasing Ti at. %. The energy gap of the film is 3.94 eV and decreases with increasing Ti at. %. The composite films showed good sensitivity and fast response time when exposed to CO.


Chemical deposition of polycrystalline ZnSe thin films from Malonic acid solution: Nucleation and growth mechanism, structural, optical and electrical studies

Abstract :
Zinc selenide (ZnSe) polycrystalline semiconductor thin films have been synthesized by dip method in malonic acid solution. The formation of nucleus and growth process of this technique has been studied. The XRD pattern shows a characteristic cubic structure with a (111) crystallographic preferred orientation. SEM studies reveal that grains are uniformly dispersed on the surface of the substrates. The optical energy gap was found to be 2.80 eV. The activation energies are 0.053 and 0.317 eV for low and high temperature region, respectively obtained from electrical measurement.

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