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04- International Journal of Thin Film Science and Technology



Effect of KrF laser irradiation on the morphology and microstructure of amorphous PZT thin films grown by RF magnetron sputtering

mohammed mahdi,
Abstract :
This work deals with the crystallization of amorphous PZT thin films, induced by 248 nm KrF laser source. The as-grown 250 nm of PZT thin films using RF magnetron system, on tree different substrate (Si/SiO2/Ti/Pt, Si/SiO2, and glass/Al) are treated from 10 to 100 mj/cm˛. The morphology is investigated by scanning electron microscopy (SEM) and surface roughness by scanning probe microscopy (SPM). The microstructure using X-ray diffraction (XRD) and ellipsometry. The Si/SiO2/Ti/Pt/PZT samples morphology investigation shows the formation of square wells of 10 µm side on the surface. However, the roughness measured is 11 nm. The microstructure analysis shows good crystallization following (110) dominant orientation with a grain size of 229.64 nm at 30, 25, and 20 mj/cm˛. For Si/SiO2/PZT samples, the surface morphology has seriously deteriorated. The microstructure analyses show the emerging of a weak peak of (110) plan with 110 nm of grain size, at 20 mj/cm˛ however ablation starts at 25 mj/cm˛, at low energy 10 and 15 mj/cm˛ only pyrochlore phase is observed. For glass/Al/PZT ablation occur at 15 mj/cm˛ and microstructure analysis shows the amorphous phase at 10 mj/cm˛.


Performance Enhancement in CZTS Solar Cells by SCAPS-1D Software

Abstract :
The development of CZTS-based solar cells is limited by two factors, the low open circuit voltage and the conversion efficiency. This is why, in this study, the impact of Cu2ZnSnS4 (CZTS) absorber thin layer parameters on the performance of the proposed MoS2/CZTS/CdS/ZnO heterostructure is simulated by the standard software SCAPS-1D. The improving output performances of this structure; the open circuit voltage (Voc), the short circuit current density (Jsc), the fill factor (FF) and the efficiency () are obtained by varying the absorber layer thickness, acceptor carrier concentration NA and taking into account the effect of the electron work function of the back metal contact. The optimized cell provides an energy conversion efficiency of 15.23% (Voc = 0.99 V, Jsc = 21.89 mA/cm2, FF = 69.79%) for an optimal thickness of 2 µm, a doping of 1×1016 cm-3. Performance enhancement of the proposed solar cell is subject to the back metal contact, the optimal simulated value of 5.7 eV of which represents that of the Platinum’s work function Pt. The interest of this simulation makes it possible to adjust the solar cells dimensions, optimize the absorbent layers doping, choose appropriately the back metal contact and therefore help to considerably reduce the various recombination phenomena as well as the secondary phases.


On variation of rate of growth of epitaxial layers by variation of substrate heating

Abstract :
In this paper, we estimate the rate of growth of epitaxial layers from the gas phase. We study dependence of the rate on the value of the heating of the substrate. By using the previously introduced approach of mass and heat transfer analysis, analytical de-pendencies of the considered rate on the parameters were obtained. In this paper based on recently introduced approach we analyzed mass and heat transport during growth of epitaxial layers in reactors for epitaxy from gas phase with sloping keeper with account native convection. Based on recently introduced approach we estimate rate of growth of films and analyzed dependences of the rate on physical and technological parameters.

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