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Characterizing the Relationship Between Sputtered Atom Flux Generated by Electrical Discharge in Plasma and Thin Film Deposition Quality |
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PP: 95-100 |
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doi:10.18576/ijtfst/130202
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Author(s) |
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Abdelkader Bouazza,
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Abstract |
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| Thin film technology is still under development, to comply with industrial demands it is necessary to be able to produce a high quality thin film, to accomplish this we must know the several parameters which contribute to the disposition of the ejected particles, on this work we have presented the analysis of semiconductor atom deposition on magnetron sputtering in 3D curves, using SIMTRA software we created a vacuum chamber which has dimension of 25cm×25cm×40cm, the magnetron used has a circle shape target with a radius of 4cm which contains two different target ( Si and Ge) and the substrate has a 10cmx10cm rectangle shape, after this adjustments with the use of Monte Carlo code we simulated the particle ejected away from target to find the number of collisions and the number of atoms arrived on the substrate with a variation of the distance that the atoms ejected had to cross, a very clear result was found which will show you that widening the distance negatively affects the coating and the deposition of the atoms.
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