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Modelling and Simulation of the Effect of Air Damping on the Frequency and Quality factor of a CMOS-MEMS Resonator |
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PP: 729-737 |
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Author(s) |
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J. O. Dennis,
A. Y. Ahmed,
M. H. Md. Khir,
A. A. S. Rabih,
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Abstract |
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| This paper reports analytical modeling and finite element analysis (FEA) of the effect of two types of air damping (squeeze
film and slide film damping) on resonance frequency and quality factor of a multi-layer CMOS-MEMS resonator designed for
application as a mass sensitive gas sensor. The sensing principle is based on change in frequency or amplitude of the resonator due to
adsorption/absorption of trace gases onto an active material to be deposited on the resonator membrane plate. The effect of air damping
for mode 1 and mode 2 are investigated and the damping coefficient is found to increase from 0.922 × 10−6 Ns/m to 1.768 × 10−6 Ns/m
for mode 1 and from 0.914 × 10−6 Ns/m to 1.708 × 10−6 Ns/m for mode 2 with increase in the overlap area of the fingers from 40 mm
to 75 mm, respectively. The quality factor (Q) of the CMOS-MEMS resonator is found to decrease with increasing damping coefficient
for both modes of vibration while the frequency remained unaffected. Analytical and simulation results shows good agreement for
damping coefficient (1.43 % and 1.22 %), resonant frequency (3.45 % and 4.4 %) and quality factor (2.27 % and 0.88 %) for mode 1
and 2, respectively. |
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